DocumentCode
1079367
Title
First-order modeling of oxide-isolated ISL
Author
Lohstroh, Jan ; Pluta, Rene M.
Author_Institution
Philips Research Laboratories, Eindhoven, Netherlands
Volume
29
Issue
4
fYear
1982
fDate
4/1/1982 12:00:00 AM
Firstpage
675
Lastpage
681
Abstract
A model is derived for an oxide-isolated ISL gate with 3-µm minimum details and fan-out = 4. The model includes an n-p-n transistor, a p-n-p transistor, a silicon diode, and four Schottky-barrier diodes. Special attention is paid to all temperature coefficients of the device parameters. Very good agreement is obtained with measurements in the temperature range from 25 to 125°C. Due to the p+channel-stopper in the process, the collector series resistance of the clamp p-n-p is relatively small.
Keywords
Clamps; Electrical resistance measurement; Laboratories; Ring oscillators; Schottky diodes; Semiconductor process modeling; Silicon; Temperature distribution; Temperature measurement; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20761
Filename
1482258
Link To Document