DocumentCode :
1080183
Title :
GaInAsP/InP DH lasers with a chemically etched facet
Author :
Iga, Kenichi ; Pollack, Martin A. ; Miller, B.I. ; Martin, R.J.
Author_Institution :
Bell Telephone Laboratories, Inc., Holmdel, NJ, USA
Volume :
16
Issue :
10
fYear :
1980
fDate :
10/1/1980 12:00:00 AM
Firstpage :
1044
Lastpage :
1047
Abstract :
We describe a new configuration and novel fabrication method for GaInAsP/InP DH lasers in which one of the facet mirrors is chemically etched and the other one is formed by cleaving. The etched facet is fabricated monolithically by wet chemical etching in a solution of HCl:CH3 COOH:H2 O2 = (1:2:1). Broad-area contact lasers of this type operating at room temperature at a wavelength of 
m have been demonstrated.
m have been demonstrated.Keywords :
Gallium materials/lasers; Chemical lasers; DH-HEMTs; Fiber lasers; Human computer interaction; Indium phosphide; Laser modes; Mirrors; Optical device fabrication; Optical fibers; Wet etching;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1980.1070360
Filename :
1070360
Link To Document :
