DocumentCode :
1080517
Title :
Some general recombination statistics for semiconductor surfaces
Author :
Landsberg, P.T.
Author_Institution :
University of Southampton, Southampton, England
Volume :
29
Issue :
8
fYear :
1982
fDate :
8/1/1982 12:00:00 AM
Firstpage :
1284
Lastpage :
1286
Abstract :
Trapping recombination by the usual phonon emission processes and by Auger processes can be combined to yield generalized Shockley-Read-Hall statistics. This has been generalized further to include a spectrum of trapping states, as well as the effect of "extra carriers." These are carriers which do not come directly from, or go to, the main bands of the semiconductor considered. The result should be useful in devices, for example, in studies of surface recombination.
Keywords :
Charge carrier processes; Electron traps; Helium; Heterojunctions; Phonons; Photovoltaic cells; Radiative recombination; Spontaneous emission; Statistics; Steady-state;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20868
Filename :
1482365
Link To Document :
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