Title :
Observation of ballistic transport in hot-electron vertical FET spectrometer using ultrathin planar-doped barrier launcher
Author :
Daniels-Race, T. ; Yamasaki, Kazuhiko ; Schaff, W.J. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
6/20/1991 12:00:00 AM
Abstract :
Experimental evidence of ballistic transport by hot electron injection into a GaAs vertical FET channel using an ultra-thin planar-doped barrier has been obtained for the first time. The spectroscopy exhibited a narrow energy spread of less than 50 meV with an estimated 10% ballistic electrons.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; hot carriers; semiconductor epitaxial layers; spectroscopy; GaAs vertical FET channel; GaAs-AlGaAs-InGaAs; ballistic transport; graded heterojunction analyser; hot electron injection; ultrathin planar-doped barrier launcher; vertical FET spectrometer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910713
