DocumentCode :
1081384
Title :
IIB-4 high responsivity homojunction GaAs triangular barrier photodiode
Author :
Barnard, J.A. ; Najjar, F.E. ; Palmateer, S.C. ; Hollis, M. ; Eastman, L.F.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1668
Lastpage :
1668
Keywords :
Charge carrier lifetime; Current density; Gain measurement; Gallium arsenide; Lithography; Molecular beam epitaxial growth; Optical beams; Optical detectors; Optical devices; Photodiodes;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20948
Filename :
1482445
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081384
