Title :
IIIB-9 polycrystalline silicon intermediate layers for hermetic seal technology
Author :
Barth, P.W. ; Lee, K.F. ; Angell, James B.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Bonding processes; Electron devices; Fabrication; Glass; Hermetic seals; Integrated circuit technology; Laboratories; Silicon compounds; Thin film transistors; Wafer bonding;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20966
