مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1081672

Title :

IVA-9 ambimodal DMOS devices

Author :

Clark, L.E.

Volume :

Issue :

fYear :

1982

fDate :

10/1/1982 12:00:00 AM

Firstpage :

1686

Lastpage :

1686

Keywords :

Bipolar transistors; FETs; Gallium arsenide; Hysteresis; Laboratories; MESFETs; Research and development; Schottky barriers; Thyristors; Voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1982.20975

Filename :

1482472

Link To Document :