Title :
VB-4 insulated gate field effect transistors with the conduction channel placed at semiconductor-semiconductor interfaces
Author :
Chen, C.Y. ; Cho, Andrew Y. ; Gossard, Arthur C.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Schottky diodes; Semiconductor diodes; Surface resistance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20991
