DocumentCode
1082071
Title
VIB-9 high energy injection and transient electron transport in gallium arsenide
Author
Tang, Jean Y. ; Hess, K. ; Iafrate, G.J. ; Malik, Rohit
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1710
Lastpage
1711
Keywords
Electrons; Epitaxial growth; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Solid state circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.21011
Filename
1482508
Link To Document