DocumentCode
1082085
Title
Improved two-wavelength demultiplexing InGaAsP photodetector
Author
Campbell, J.C. ; Dentai, A.G. ; Lee, T.P. ; Burrus, C.A.
Author_Institution
Bell Laboratories, Holmdel, NJ, USA
Volume
16
Issue
6
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
601
Lastpage
603
Abstract
The structure of the previously reported InGaAsP two-wavelength demultiplexing photodetector has been inverted to circumvent fabrication problems associated with dissolution of the lower-bandgap quaternary layer during the LPE growth of subsequent higher bandgap layers. In addition, lower doping levels have been achieved in the LPE layers. The result of these modifications has been devices with greatly improved optical and electrical characteristics. The long-wavelength cutoff has been extended to 1.6 μm.
Keywords
Gallium materials/devices; Photodetectors; Wavelength-division multiplexing; Circuits; Demultiplexing; Diodes; Doping; Electric variables; Gold; Indium phosphide; Photodetectors; Photonic band gap; Substrates;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070534
Filename
1070534
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