LED bandwidth improvement by bipolar pulsing

The application of reverse bias pulses at on-off transitions increased the maximum bit rate of full power operation of long wavelength InGaAsP LED´s from 200 to 300 Mbits/s by reduction of the stored charge fall time. Although designed primarily for nonreturn to zero (NRZ) DS-4 experiments, the circuitry operates from 50 to 300 Mbits/s for the return to zero (RZ) or NRZ format with fixed or pseudo-random word patterns.