Title :
Modeling of charge transfer by surface acoustic waves in a monolithic metal/ZnO/SiO2/Si system
Author :
Augustine, Frank ; Schwartz, Richard J. ; Gunshor, Robert L.
Author_Institution :
Hewlett-Packard Company, Ft. Collins, CO
fDate :
12/1/1982 12:00:00 AM
Abstract :
This paper discusses modeling of minority-carrier charge transfer by surface acoustic waves (SAW´s). An idealized, structure independent model which includes the mechanism of carrier diffusion is described and definitions of charge-transfer efficiency and charge capacity analogous to those of a conventional charge-coupled device are introduced and developed. The model is used to predict the fundamental upper limit performance of the device in the absence of surface-state trapping and bulk recombination generation. The parameters of the model are evaluated for the monolithic metal/ZnO/SiO2/Si system, and the model is used to predict charge distributions and charge capacity for surface wave frequencies in the range of 40 MHz to 2 GHz. At high frequencies, the predicted device performance is found to be limited by carrier diffusion and the SiO2thickness.
Keywords :
Acoustic waves; Capacitance; Charge transfer; Frequency; Potential well; Predictive models; Silicon; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.21045