Title :
Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation
Author :
Suzuki, Kunihiro ; Tada, Yoko ; Kataoka, Yuji ; Kawamura, Kazuo ; Nagayama, Tsutomu
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
4/1/2008 12:00:00 AM
Abstract :
We previously proposed a compact model of amorphous layer thickness over a wide range of ion implantation conditions using a vertical ion implantation profile parameter database. We also proposed a new parameter for the through dose. We extended the model to any tilt angle for ion implantation using one more parameter for the lateral straggling of the ion implantation profile.
Keywords :
amorphous semiconductors; ion implantation; amorphous layer thickness; high-tilt-angle; lateral straggling; vertical ion implantation profile parameter database; Amorphous materials; Analytical models; Databases; Helium; Impurities; Ion implantation; Laboratories; Solids; Substrates; Transmission electron microscopy; Amorphous; ion implantation; tilt;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.916714
