A Combined Modulation of Set Current With Reset Voltage to Achieve 2-bit/cell Performance for Filament-Based RRAM

Author

Fang Yuan ; Zhigang Zhang ; Liyang Pan ; Jun Xu

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

2

Issue

6

fYear

2014

fDate

Nov. 2014

Firstpage

154

Lastpage

157

Abstract

A combined operation scheme to realize multibit switching in filament-based bipolar RRAM device is proposed. By combining the modulations of the current compliance in set operations with the stop voltage in reset operations together, the size or the quantity of the filaments in the film bulk can be controlled. An RRAM device with the structure of Ag/HfOx/Pt is fabricated and the 2-bit/cell memory function is achieved by the proposed modulation. Furthermore, the 2-bit/cell data reliability is satisfactory including the high-temperature retention, cycling endurance.

Keywords

bipolar memory circuits; hafnium compounds; platinum; random-access storage; silver; Ag; HfO_x; Pt; combined modulation; combined operation scheme; current compliance; cycling endurance; data reliability; filament-based bipolar RRAM device; high-temperature retention; multibit switching; Films; Hafnium compounds; Nonvolatile memory; Performance evaluation; Random access memory; Reliability; Resistance; Multibit; combined modulation; conducting filament; current compliance (CC); reset voltage; resistive switching;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2014.2342738

Filename

6863671