Title :
Refractory MoSi2and MoSi2/polysilicon bulk CMOS Circuits
Author :
Chow, T.P. ; Steckl, A.J. ; Jerdonek, R.T.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY
fDate :
2/1/1982 12:00:00 AM
Abstract :
Refractory MoSi2and MoSi2/polysilicon have been used to fabricate high-performance 3µm bulk CMOS circuits. Thirty-nine stage ring oscillators, with a fan-in and fan-out of 1, exhibit a switching delay/stage of 1.2 to 1.4ns, and a power-delay product of 0.22 to 0.25pJ at a supply voltage of 5V. The power-delay product ranges from 40fJ for a delay of 9ns to 1pJ for a delay of 0.6ns. Self-checking pattern generator circuits implemented with the same technology show an operating frequency as high as 80 MHz, which corresponds to approximate in-circuit delays of 1.2ns/stage.
Keywords :
Boron; CMOS process; Circuits; Delay; Implants; MOS devices; Ring oscillators; Silicides; Silicon; Sputter etching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25469