DocumentCode :
1082778
Title :
GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications
Author :
McLevige, W.V. ; Yuan, H.T. ; Duncan, W.M. ; Frensley, W.R. ; Doerbeck, F.H. ; Morkoc, H. ; Drummond, T.J.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
Volume :
3
Issue :
2
fYear :
1982
fDate :
2/1/1982 12:00:00 AM
Firstpage :
43
Lastpage :
45
Abstract :
Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ 100 were obtained, demonstrating the feasibility of this technology for I2L types of digital integrated circuits.
Keywords :
Annealing; Application specific integrated circuits; Bipolar integrated circuits; Digital integrated circuits; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Implants; Microwave transistors; Molecular beam epitaxial growth;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25471
Filename :
1482576
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1082778
بازگشت