DocumentCode
1083200
Title
An open tube method of Zn diffusion in III-V compounds
Author
Phatak, S.B.
Author_Institution
ITT Electro-Optical Products Division, Roanoke, VA
Volume
3
Issue
5
fYear
1982
fDate
5/1/1982 12:00:00 AM
Firstpage
132
Lastpage
134
Abstract
A novel method for diffusing volatile impurities (such as Zn) in III-V compounds has been developed. The apparatus described here maintains an appropriate vapor pressure of Zn in a localized and confined manner in close proximity over the III-V compound wafer. This technique is used for diffusing Zn in InP.
Keywords
Boats; Etching; Fabrication; III-V semiconductor materials; Impurities; Indium phosphide; Ion implantation; Niobium; Tin; Zinc;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25511
Filename
1482616
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