Heterostructure insulated gate field effect transistors operated in hot electron-regime

Author

Martinez, E. ; Shur, M. ; Schuermeyer, F.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

854

Lastpage

856

Abstract

The experimental study of the hot-electron, real-space transfer regime of operation in the Al_0.7Ga_0.3As/In_0.2Ga_0.8As/GaAs heterostructure insulated gate field effect transistors (HIGFET´s) demonstrates that the device transconductance in this regime of operation can be more than one order of magnitude higher than in the conventional mode of operation. In this hot-electron regime of operation, the drain-to-source voltage acts as the input voltage, and the gate current as the output current. The reason for the observed large transconductance is a large conduction band discontinuity between the Al_0.7Ga_0.3As and In _0.2Ga_0.3As which causes the real space transfer at higher electron energies leading to a more rapid increase of the gate current with an increase in the drain-to-source voltage

Keywords

III-V semiconductors; aluminium compounds; charge-coupled devices; gallium arsenide; hot electron transistors; indium compounds; insulated gate field effect transistors; Al_0.7Ga_0.3As/In_0.2Ga_0.8As/GaAs; AlGaAs-InGaAs-GaAs; HIGFETs; conduction band discontinuity; device transconductance; drain-to-source voltage; gate current; heterostructure insulated gate field effect transistors; hot electron-regime; real-space transfer regime; Capacitance; Cutoff frequency; Electrons; FETs; Gallium arsenide; HEMTs; Insulation; MODFETs; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285045

Filename

285045