DocumentCode :
1083563
Title :
Operation of a double heterojunction GaAs/AlGaAs injection laser with a p-type active layer in a strong magnetic field
Author :
Bluyssen, H.J.A. ; Van Ruyven, L.J.
Author_Institution :
University of Nijmegen, Toernooiveld, The Netherlands
Volume :
17
Issue :
11
fYear :
1981
fDate :
11/1/1981 12:00:00 AM
Firstpage :
2190
Lastpage :
2195
Abstract :
Measurements of the energy shift of the laser emission and the threshold current of a double heterojunction GaAs/AlGaAs injection laser with a p-type active layer as a function of the magnetic field up to 25 T and at T = 6 K and 40 K are presented. A simple expression is derived for calculation of the maximum of the gain curve, which coincides with the energy of the laser emission as a function of the magnetic field and the electronic scattering time. From the experimentally observed shift of the laser emission and the calculated maximum of the gain curve as a function of the magnetic field values for the carrier density at threshold, and for the electronic scattering time in the active layer at both temperatures have been obtained.
Keywords :
Gallium materials/lasers; Laser thermal factors; Magnetic field effects; Charge carrier density; Current measurement; Energy measurement; Gallium arsenide; Heterojunctions; Magnetic field measurement; Magnetic fields; Scattering; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1070675
Filename :
1070675
Link To Document :
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