Title :
The lateral punch-through transistor
Author :
Wilamowski, B.M. ; Jaeger, R.C.
Author_Institution :
Auburn University, Auburn, AL
fDate :
10/1/1982 12:00:00 AM
Abstract :
Operation of a diffused-gate, lateral punch through transistor has been demonstrated. Operation is similar to the static induction transistor, and the device can be used in planar integrated circuits. Current flow in this lateral device obeys the space charge limited conduction law over a wide range of currents, and the drain current exhibits a negative temperature coefficient.
Keywords :
Conductivity; Electric breakdown; Frequency; Marine vehicles; Negative feedback; Poisson equations; Space charge; Temperature distribution; Thermal resistance; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25568
