DocumentCode :
1083979
Title :
Constricted double-heterojunction AlGaAs diode lasers: Structures and electrooptical characteristics
Author :
Botez, Dan
Author_Institution :
RCA Labs., Princeton, NJ, USA
Volume :
17
Issue :
12
fYear :
1981
fDate :
12/1/1981 12:00:00 AM
Firstpage :
2290
Lastpage :
2309
Abstract :
Constricted double-heterojunction (CDH) diode lasers are presented as the class of nonplanar-substrate devices for which the laser cavity is one of the least resistive electrical path between the contact and the substrate. Various types of CDH structures are discussed while treating three general topics: liquid-phase epitaxy (LPE) over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. `Ridge-guide´ CDH lasers have positive-index lateral mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150°C, light-current characteristics with second-harmonic distortion as low as -57 dB below to fundamental level, threshold-current temperature coefficients T0 as high as 375° (pulsed) and 310° (CW), constant external differential quantum efficiency to 100°C, lasing operation to 170°C CW and 280°C pulsed. `Semileaky guide CDH lasers have an asymmetric leaky cavity for lateral mode confinement and provide; single-mode operation for 15-20 mW/facet CW, and to 50 mW/facet at 50 percent duty cycle. Modulation characteristics and preliminary reliability data are discussed.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; integrated optics; laser cavity resonators; laser modes; liquid phase epitaxial growth; semiconductor junction lasers; CDH structures; III-V semiconductors; Ridge-guide´ CDH lasers; Semileaky guide CDH lasers; channeled substrates; constricted double heterojunction AlGaAs diode lasers; contact; current control; electrooptical characteristics; external differential quantum efficiency; laser cavity; lateral mode control; least resistive electrical path; light-current characteristics; liquid-phase epitaxy; modulation characteristics; nonplanar-substrate devices; positive-index lateral mode confinement; reliability data; second-harmonic distortion; single-mode CW operation; structures; substrate; threshold-current temperature coefficients; Diode lasers; Epitaxial growth; Laser modes; Laser noise; Lasers and electrooptics; Optical control; Optical pulses; Optical sensors; Semiconductor lasers; Substrates;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1070715
Filename :
1070715
Link To Document :
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