DocumentCode :
1084441
Title :
A monolithic GaAs DC to 2-GHz feedback amplifier
Author :
Petersen, Wendall C. ; Gupta, Aditya ; Decker, D.R.
Author_Institution :
Rockwell International, Thousand Oaks, CA
Volume :
30
Issue :
1
fYear :
1983
fDate :
1/1/1983 12:00:00 AM
Firstpage :
27
Lastpage :
29
Abstract :
Resistive feedback in low-frequency FET amplifiers is an attractive method of simultaneously attaining gain flatness and excellent input-output VSWR over wide bandwidths. Combined with simple matching circuitry, the feedback approach allows the design of general-purpose utility amplifiers requiring much less chip area than when conventional matching techniques are used. The 1.5- by 1.5-mm chip described in this paper provides 10-dB ± 1-dB gain, excellent input and output VSWR, and saturated output power in excess of + 20 dBm, from below 5 MHz to 2 GHz. The noise figure is approximately 2 dB when biased for minimum noise, with an associated gain of 9 dB.
Keywords :
Bandwidth; FET integrated circuits; Feedback amplifiers; Frequency; Gain; Gallium arsenide; Impedance matching; Microwave FETs; Noise figure; Parasitic capacitance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21065
Filename :
1482966
Link To Document :
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