Title :
9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates
Author :
Chu, K.K. ; Chao, P.C. ; Pizzella, M.T. ; Actis, R. ; Meharry, D.E. ; Nichols, K.B. ; Vaudo, R.P. ; Xu, X. ; Flynn, J.S. ; Dion, J. ; Brandes, G.R.
Author_Institution :
Inf. & Electron. Warfare Syst., BAE Syst., Nashua, NH, USA
Abstract :
High power microwave AlGaN-GaN high electron-mobility transistors (HEMTs) on free-standing GaN substrates are demonstrated for the first time. Measured gate leakage was -2.2 μA/mm at -20 V and -10 μA/mm at -45 V gate bias. When operated at a drain bias of 50 V, devices showed a record continuous-wave output power density of 9.4 W/mm at 10 GHz with an associated power-added efficiency of 40%. Long-term stability of device RF operation was also examined. Under room conditions, devices driven at 25 V and 3-dB gain compression remained stable in 200 h, degrading only by 0.18 dB in output power. Such results illustrate the potential of GaN substrate technology in supporting reliable, high performance AlGaN-GaN HEMTs for microwave power applications.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; microwave power transistors; substrates; -20 V; -45 V; 10 GHz; 50 V; AlGaN-GaN; GaN substrate technology; associated power-added efficiency; continuous-wave output power density; device RF operation; drain bias; free-standing GaN substrates; gain compression; gate bias; gate leakage; high electron-mobility transistors; high power HEMT; microwave AlGaN-GaN HEMT; microwave power applications; power density AlGaN-GaN HEMT; Aluminum gallium nitride; Degradation; Gallium nitride; Gate leakage; HEMTs; MODFETs; Microwave devices; Power generation; Radio frequency; Stability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.833847
