Title :
High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
Author :
Black, Charles T. ; Guarini, Kathryn W. ; Zhang, Ying ; Kim, Hyungjun ; Benedict, John ; Sikorski, Edmund ; Babich, Inna V. ; Milkove, Keith R.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metal-oxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology.
Keywords :
MOS capacitors; capacitance; self-assembly; accumulation capacitance; high-capacity MOS decoupling capacitors; metal-oxide-semiconductor; nanometer-scale polymer self assembly; on-chip power supply decoupling capacitors; planar devices; process complexity; self assembly technique; self-assembled MOS decoupling capacitors; semiconductor microfabrication; silicon-on-insulator technology; surface area; Capacitance; Fabrication; Frequency; Integrated circuit noise; MIM capacitors; MOS capacitors; Nanoscale devices; Power supplies; Self-assembly; Semiconductor device noise; Decoupling capacitor; high surface area; metal–oxide–semiconductor; self assembly;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.834637
