Ballistic transport and velocity overshoot in semiconductors: Part I—Uniform field effects

The relationship between ballistic electron transport and velocity overshoot, in semiconductor materials, is clarified. By considering the behavior of electrons in a uniform electric field, we show that while ballistic transport can coexist with velocity overshoot, it is not necessary for overshoot. Furthermore, we show that ballistic transport will not lead to overshoot unless one of the two classic mechanisms for overshoot is also operative.