Title :
1.3 μm waveguided electroabsorption modulators with strain-compensated InAsP/InGaP MQW structures
Author :
Wakita, K. ; Kotaka, I. ; Amano, T. ; Sugiura, H.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
8/3/1995 12:00:00 AM
Abstract :
High-quality multiquantum well (MQW) structures with 1.5% compressive strain in InAsP wells and 0.8% tensile strain in InGaP barriers have been grown by gas-source molecular beam epitaxy on InP substrates. High-speed (3 dB bandwidth over 10 GHz) and low driving voltage (lower than 3 V for 20 dB on/off ratio) operation using these structure is demonstrated. These characteristics are the first reported for MQW modulators operating at 1.3 μm
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electro-optical modulation; electroabsorption; indium compounds; optical communication equipment; optical fibre communication; semiconductor quantum wells; 1.3 micrometre; 3 dB bandwidth; InAsP-InGaP-P; InP; compressive strain; driving voltage; gas-source molecular beam epitaxy; on/off ratio; strain-compensated MQW structures; tensile strain; waveguided electroabsorption modulators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950949
