Title :
Integrated npn/pnp GaAs/AlGaAs HBTs grown by selective MBE
Author :
Umemoto, D.K. ; Velebir, J.R. ; Kobayashi, K.W. ; Oki, A.K. ; Streit, D.C.
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
Abstract :
npn and pnp GaAs/AlGaAs heterojunction bipolar transistors have been successfully fabricated on the same GaAs substrate using selective molecular beam epitaxy and a new merged HBT processing technology. The DC and microwave characteristics of the transistors are equivalent to those of similar HBTs grown by conventional MBE on separate GaAs substrates.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; DC characteristics; GaAs-AlGaAs; HBTs; heterojunction bipolar transistors; merged HBT processing technology; microwave characteristics; monolithic complementary HBTs; npn HBTs; pnp HBTs; same GaAs substrate; selective MBE; selective molecular beam epitaxy; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910953
