Title :
Fabrication of SOS MOSFETs using two-step doping with excimer laser
Author :
Nii, T. ; Matsumoto, S. ; Matsuda, T.
Author_Institution :
Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
Abstract :
Using two-step doping with excimer laser, p-channel MOSFETs were fabricated in thin silicon films on sapphire (SOS). Source and drain p/sup +/ layers were formed using two-step doping with only one melting pulse of excimer laser. Devices were processed at room temperature except for the LPCVD gate oxide deposition at 450/spl deg/C. High-quality thin film transistors (TFTs) were fabricated with on/off current ratio of 7 and a field effect hole mobility of 145 cm/sup 2//V s.<>
Keywords :
carrier mobility; chemical vapour deposition; insulated gate field effect transistors; semiconductor doping; thin film transistors; 450 degC; LPCVD gate oxide deposition; SOS MOSFETs; excimer laser; field effect hole mobility; melting pulse; on/off current ratio; p-channel MOSFETs; thin film transistors; two-step doping; Doping; Gas lasers; MOSFETs; Optical device fabrication; Optical pulses; Pulsed laser deposition; Semiconductor films; Silicon; Temperature; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
