Title :
Optoelectronic integration of a GaAs/AlGaAs bistable field effect transistor (BISFET) and LED
Author :
Ojha, J.J. ; Simmons, J.G. ; Mand, R.S. ; SpringThorpe, A.J.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic devices. In this work, integration of a BISFET with an LED is reported. Both devices have been implemented on a single semiconductor substrate using a single fabrication sequence. The BISFET is used to current drive the LED. Abrupt transitions and hysteresis are seen in the optical output from the circuit in the range of gate voltage from 1.75 V to 1.9 V.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; integrated optoelectronics; light emitting diodes; semiconductor switches; 1.75 to 1.9 V; BISFET; GaAs-AlGaAs; LED; OEIC; bistable FET; bistable field effect transistor; current drive; hysteresis; inversion-channel switching device; optical output; optoelectronic integration; semiconductor structure; semiconductor substrate; single fabrication sequence; Circuits; FETs; Gallium arsenide; Hysteresis; Light emitting diodes; Optical bistability; Optical device fabrication; Optoelectronic devices; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
