Effect of plasma poly etch on effective channel length and hot carrier reliability in submicron transistors

Author

Li, Xiaoyu ; Divakaruni, R. ; Hsu, Jen-Tai ; Prabhakar, V. ; Aum, Paul ; Chan, David ; Viswanathan, C.R.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

15

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

140

Lastpage

141

Abstract

The effective channel length (L/sub eff/)) variation resulting from exposure to the plasma during the poly-etch step was investigated. The plasma induced charging effect was also studied using gate polysilicon antenna structures. It was found that, due to the poly etching, the L/sub eff/ variation has a larger impact on the fully processed transistor transconductance characteristics than the charging effect in the gate oxide region. It is believed that the damage in the LDD region, which gives rise to the L/sub eff/ variation, imposes a serious hot carrier reliability problem.<>

Keywords

hot carriers; insulated gate field effect transistors; reliability; semiconductor device testing; sputter etching; LDD region; MOSFETs; effective channel length; gate polysilicon antenna structures; hot carrier reliability; plasma induced charging effect; plasma poly etch; submicron transistors; transistor transconductance characteristics; Antenna measurements; Etching; Hot carriers; MOSFETs; Plasma applications; Plasma devices; Plasma properties; Plasma temperature; Stress; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.285403

Filename

285403