Title :
Self-aligned InAlAs/InGaAs heterojunction bipolar transistor with a buried subcollector grown by selective epitaxy
Author :
Jong-In Song ; Frei, M.R. ; Hayes, J.R. ; Bhat, Ritesh ; Cox, H.M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
We report the first microwave characterization of an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor (HBT) with a buried InGaAs subcollector grown by selective epitaxy. The study compares two HBT´s having identical 2×10 μm2 self-aligned emitter fingers but different subcollectors. Improvement in microwave performance of the selectively-grown HBT over the conventional HBT was observed due to the reduced parasitic base-collector capacitance achieved by incorporating the selectively-grown buried subcollector.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; solid-state microwave devices; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As; InAlAs/InGaAs HBT; buried InGaAs subcollector; heterojunction bipolar transistor; microwave characterization; microwave performance; parasitic base-collector capacitance; selective epitaxy; selectively-grown HBT; self-aligned emitter fingers; Epitaxial growth; Etching; Fabrication; Fingers; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Microwave transistors; Parasitic capacitance;
Journal_Title :
Electron Device Letters, IEEE
