DocumentCode
1086352
Title
Fast High Voltage Switching Using Stacked MOSFETs
Author
Jiang, Weihua
Author_Institution
Nagaoka Univ. of Technol., Niigata
Volume
14
Issue
4
fYear
2007
Firstpage
947
Lastpage
950
Abstract
Fast switching of high voltage using stacked MOSFETs has been studied. It is shown that the effective drain-source capacitance has a negative influence in the turn-off process, especially when the load impedance is relatively high. In order to solve this problem, an alternative circuit configuration is tested where additional switching modules are used to deal with the drain-source capacitance. The experimental results have demonstrated fast switching performance, even for a high impedance load.
Keywords
MOSFET circuits; field effect transistor switches; high-voltage engineering; power MOSFET; power semiconductor switches; effective drain-source capacitance; high-voltage switching; load impedance; stacked MOSFET; switching circuit; turn-off process; Capacitance; Circuit testing; Impedance; Inductance; MOSFETs; Power semiconductor switches; Pulse power systems; Semiconductor devices; Switching circuits; Voltage;
fLanguage
English
Journal_Title
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
1070-9878
Type
jour
DOI
10.1109/TDEI.2007.4286531
Filename
4286531
Link To Document