Title :
Development of accurate on-wafer, cryogenic characterization techniques
Author :
Laskar, J. ; Bautista, J.J. ; Nishimoto, Masahiko ; Hamai, M. ; Lai, Richard
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fDate :
7/1/1996 12:00:00 AM
Abstract :
Significant advances in the development of high electron mobility field-effect transistors (HEMT´s) have resulted in cryogenic, low-noise amplifiers (LNA´s) whose noise temperatures are within an order of magnitude of the quantum noise limit (hν/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting-insulator-superconducting (SIS) front-ends in the 1-100 GHz frequency band. Key to identification of the best HEMT´s and optimization of cryogenic LNA´s is accurate and repeatable device measurements at cryogenic temperatures. A cryogenic on-wafer noise and scattering parameter measurement system has been developed to provide a systematic investigation of HEMT noise characteristics. In addition, an improved parameter extraction technique has been developed to help understand the relationship between device structure and LNA performance
Keywords :
HEMT integrated circuits; MMIC amplifiers; S-parameters; UHF measurement; calibration; cryogenic electronics; electric noise measurement; field effect MMIC; high electron mobility transistors; integrated circuit noise; integrated circuit testing; microwave amplifiers; microwave measurement; millimetre wave measurement; semiconductor device noise; semiconductor device testing; 0 to 40 GHz; 16 to 300 K; HEMT noise characteristics; HEMT technology; broadband measurement; cryogenic LNA; cryogenic on-wafer measurement system; high electron mobility transistors; low-noise amplifiers; noise parameter measurement; noise temperatures; onwafer characterization techniques; parameter extraction technique; quantum noise limit; repeatable device measurements; scattering parameter measurement; Cryogenics; Electron mobility; FETs; Frequency; HEMTs; Low-noise amplifiers; Masers; Superconducting device noise; Superconducting devices; Temperature measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
