DocumentCode
108665
Title
IGBT: The GE Story [A Look Back]
Author
Baliga, Jayant
Volume
2
Issue
2
fYear
2015
fDate
Jun-15
Firstpage
16
Lastpage
23
Abstract
This article describes the events that led to the conception, development, and commercialization of the IGBT at the General Electric (GE) Company. A unique set of circumstances consisting of the diversity of GE product divisions, a corporate edict to maintain businesses leadership using innovations in technology, and a visionary management style from the top of the company formed the crucible for the gestation of IGBT technology.
Keywords
insulated gate bipolar transistors; GE company; General Electric company; IGBT technology; Companies; Insulated gate bipolar transistors; Logic gates; MOSFET; Product design; Product development; Transistors;
fLanguage
English
Journal_Title
Power Electronics Magazine, IEEE
Publisher
ieee
ISSN
2329-9207
Type
jour
DOI
10.1109/MPEL.2015.2421753
Filename
7130703
Link To Document