• DocumentCode
    1086771
  • Title

    Refinements in the measurement of depleted generation lifetime

  • Author

    Eades, Wendell D. ; Shott, John D. ; Swanson, Richard M.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    30
  • Issue
    10
  • fYear
    1983
  • fDate
    10/1/1983 12:00:00 AM
  • Firstpage
    1274
  • Lastpage
    1277
  • Abstract
    Constant capacitance measurement of bulk generation lifetime using MOS capacitors with a typical desktop computer controlled interface bus measurement system is shown to be practical for medium-and high-lifetime silicon. Refinements to the basic technique are developed to deal with surface generation, diffusion from the neutral bulk, and generation in the lateral surface depletion region.
  • Keywords
    Capacitance measurement; Channel bank filters; Circuits; Computer interfaces; Current measurement; MOS capacitors; Pulse measurements; Silicon; Time measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21286
  • Filename
    1483187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1086771