Title :
Refinements in the measurement of depleted generation lifetime
Author :
Eades, Wendell D. ; Shott, John D. ; Swanson, Richard M.
Author_Institution :
Stanford University, Stanford, CA
fDate :
10/1/1983 12:00:00 AM
Abstract :
Constant capacitance measurement of bulk generation lifetime using MOS capacitors with a typical desktop computer controlled interface bus measurement system is shown to be practical for medium-and high-lifetime silicon. Refinements to the basic technique are developed to deal with surface generation, diffusion from the neutral bulk, and generation in the lateral surface depletion region.
Keywords :
Capacitance measurement; Channel bank filters; Circuits; Computer interfaces; Current measurement; MOS capacitors; Pulse measurements; Silicon; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21286
