Ion implantation enhanced metal-Si-metal photodetectors

Author

Sharma, Arvind Kumar ; Scott, K.A.M. ; Brueck, S.R.J. ; Zolper, J.C. ; Myers, D.R.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

6

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

635

Lastpage

638

Abstract

The quantum efficiency and frequency response of simple Ni-Si-Ni metal-semiconductor-metal (MSM) photodetectors at long wavelengths are significantly enhanced with a simple, ion-implantation step to create a highly absorbing region /spl sim/1 μm below the Si surface. The internal quantum efficiency is improved by a factor of /spl sim/3 at 860 nm (to 64%) and a full factor of ten at 1.06 μm (to 23%) as compared with otherwise identical unimplanted devices. Dark currents are only slightly affected by the implantation process and are as low as 630 pA for a 4.5-μm gap device at 10-V bias. Dramatic improvement in the impulse response is observed, 100 ps vs, 600 ps, also at 10-V bias and 4.5-μm gap, due to the elimination of carrier diffusion tails in the implanted devices. Due to its planar structure, this device is fully VLSI compatible. Potential applications include optical interconnections for local area networks and multi-chip modules.

Keywords

frequency response; integrated circuit technology; integrated optics; integrated optoelectronics; ion implantation; metal-semiconductor-metal structures; nickel; optical interconnections; photodetectors; silicon; 1.06 mum; 10 V; 100 ps; 23 percent; 4.5 mum; 600 ps; 630 pA; 64 percent; 860 nm; Ni-Si-Ni; Si surface; VLSI compatible; carrier diffusion tails; dark currents; frequency response; highly absorbing region; implantation process; implanted devices; impulse response; integrated optics; integrated optoelectronics; internal quantum efficiency; ion implantation; local area networks; long wavelengths; metal-Si-metal photodetectors; metal-semiconductor-metal photodetectors; multi-chip modules; optical interconnections; planar structure; quantum efficiency; Dark current; Frequency response; Ion implantation; Optical interconnections; Optical surface waves; Photodetectors; Region 1; Surface waves; Tail; Very large scale integration;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.285564

Filename

285564