Title :
High performance 634 nm InGaP/InGaAlP strained quantum well lasers
Author :
Chang-Hasnain, Connie J. ; Bhat, Ritesh ; Koza, M.A.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The first strained InGaP/InGaAlP quantum well lasers emitting at 634 nm are reported. High optical power exceeding 600 mW and low threshold current density of 1.7 kA/cm2 were obtained with 20 mu m wide broad stripe lasers with uncoated facets. This power and threshold current density are believed to be the best reported to date for diode lasers emitting near 630 nm.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 634 nm; InGaP-InGaAlP; broad stripe lasers; diode lasers; optical power; strained quantum well lasers; threshold current density; uncoated facets;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910974
