Title :
Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors
Author :
Huang, Zhihong ; Oh, Jungwoo ; Banerjee, Sanjay K. ; Campbell, Joe C.
Author_Institution :
Coll. of Eng., Texas Univ., Austin, TX
fDate :
3/1/2007 12:00:00 AM
Abstract :
The effectiveness of thin SiGe buffer layers in terminating threading dislocations and reducing photodiode dark current for Ge epitaxially grown on Si (001) has been investigated. The structural morphology of the films was studied by atomic force microscopy and transmission electron microscopy. The dark current of Ge on Si photodiodes can be reduced by over an order of magnitude by incorporating two different composition SiGe buffer layers. The origin of dark current and the effectiveness of thermal annealing the SiGe layers were also studied
Keywords :
atomic force microscopy; buffer layers; dark conductivity; elemental semiconductors; germanium; photodetectors; silicon; silicon compounds; surface morphology; transmission electron microscopy; Ge-Si; Ge-on-Si photodetectors; SiGe; SiGe buffer layers; atomic force microscopy; dark currents; structural morphology; thermal annealing; threading dislocations; transmission electron microscopy; Atomic force microscopy; Atomic layer deposition; Buffer layers; Dark current; Germanium silicon alloys; Morphology; Photodetectors; Photodiodes; Silicon germanium; Transmission electron microscopy; Germanium; photodetector; photodiode; silicon;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.890395
