DocumentCode
1086982
Title
A CCD imager overlaid with a thin-film photodetector of a heterojunction ZnSe-Zn1-x Cdx Te
Author
Chikamura, Takao ; Miyata, Yutaka ; Yano, Kohsaku ; Ohta, Yoshio ; Fujiwara, Shinji ; Terui, Yasuaki ; Yoshino, Masaru ; Nakayama, Mitsuo ; Fukai, Masakazu
Author_Institution
Matsushita Electric Industrial Company, Ltd., Osaka, Japan
Volume
30
Issue
10
fYear
1983
fDate
10/1/1983 12:00:00 AM
Firstpage
1386
Lastpage
1391
Abstract
A CCD imager which is composed of an interline transfer type scanner in the imaging area and a thin-film photodetector of a heterojunctjon ZnSe-Zn1-x Cdx Te has been developed. The array consists of 
picture elements. The imaging area is about 
mm2in size which corresponds to that of a 2/3-in vidicon. For the device to achieve high performance, necessary conditions between the parameters of the overlaid thin-film photoconductor and the scanner have been analyzed. Blooming phenomenon is deeply related to the sensitivity. The blooming has been suppressed without sacrificing the sensitivity by applying the pulse operation of the heterojunction. As a result, excellent performances such as high sensitivity and large blooming suppression have been realized. The scene illumination if F 1.4 100 1x (S/N ratio is 46 dB for luminance signal) in a single-chip color camera. The blooming control capability is 250 times of the saturation exposure.
picture elements. The imaging area is about mm2in size which corresponds to that of a 2/3-in vidicon. For the device to achieve high performance, necessary conditions between the parameters of the overlaid thin-film photoconductor and the scanner have been analyzed. Blooming phenomenon is deeply related to the sensitivity. The blooming has been suppressed without sacrificing the sensitivity by applying the pulse operation of the heterojunction. As a result, excellent performances such as high sensitivity and large blooming suppression have been realized. The scene illumination if F 1.4 100 1x (S/N ratio is 46 dB for luminance signal) in a single-chip color camera. The blooming control capability is 250 times of the saturation exposure.Keywords
Charge coupled devices; Heterojunctions; Layout; Lighting; Performance analysis; Photoconducting devices; Photodetectors; Tellurium; Thin film devices; Transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21304
Filename
1483205
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