• DocumentCode
    1087079
  • Title

    Optimum semiconductors for high-frequency and low-noise MESFET applications

  • Author

    Golio, J.M. ; Trew, R.J.

  • Author_Institution
    North Carolina State University, Raleigh, NC
  • Volume
    30
  • Issue
    10
  • fYear
    1983
  • fDate
    10/1/1983 12:00:00 AM
  • Firstpage
    1411
  • Lastpage
    1413
  • Abstract
    An analytic MESFET device model has been used to study the optimum velocity-field characteristics of materials that are potentially useful for millimeter-wave and low-noise MESFET applications. Materials of current interest have been characterized and compared. Results explain the relative importance of parameters such as low-field mobility and saturated velocity. Differences between GaAs and Si performance are explained and a number of attractive compound semiconductors for high-frequency and low-noise device fabrications are indicated.
  • Keywords
    Electrons; Fabrication; Frequency; Gallium arsenide; MESFETs; Monte Carlo methods; Noise figure; Semiconductor device noise; Semiconductor materials; Variable speed drives;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21312
  • Filename
    1483213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087079