Title :
Low threshold current density of 620 nm band MQW-SCH AlGaInP semiconductor lasers with Mg doped AlInP cladding layer
Author :
Murata, Hidekazu ; Terui, Y. ; Saitoh, Masatoshi ; Satoh, Y. ; Terasaki, R.
Author_Institution :
Denki Kagaku Kogyo Co. Ltd., Tokyo, Japan
Abstract :
Mg doped AlInP was used as the p-type cladding layer of 620 nm-band multiple quantum well separate confinement heterostructure (MQW-SCH) AlGaInP semiconductor lasers for the first time. The low threshold current density of 1.81 kA cm-2 for broad area lasers (stripe width: 50 mu m, cavity length: 300 mu m) was obtained at 628 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; 300 micron; 50 micron; 620 to 628 nm; AlGaInP; AlInP:Mg cladding layer; MQW-SCH; broad area lasers; low threshold current density; multiple quantum well separate confinement heterostructure; p-type cladding layer; semiconductor lasers; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910983
