Title :
Impedance-controlled wideband active balun based on current conveyors
Author :
Godara, B. ; Fabre, A.
Author_Institution :
Inst. Super. d´´ Electron. de Paris, Paris
Abstract :
The first active power-split balun with controllable output impedance is proposed. Its operation is wideband, with good balance characteristics from DC to 3 GHz. It takes up 0.036 mm in a 0.35 mum SiGe BiCMOS technology and is the smallest balun ever observed. Its additional properties are: excellent and wideband overall S-parameter performance; highest linearity observed for a balun; and stability against temperature and process variations.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; S-parameters; baluns; microwave integrated circuits; semiconductor materials; stability; BiCMOS technology; S-parameter performance; SiGe; active power-split balun; current conveyors; frequency 3 GHz; impedance-controlled wideband active balun; size 0.13 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070479
