1087433

IIA-2 double heterojunction Al0.5Ga0.5As/GaAs bipolar transistors with improved interfaces

Fishcer, R. ; Su, S.L. ; Arnold, D. ; Klem, J. ; Morkoc, H. ; Lyons, W.G. ; Tejayadi, O.

University of Illinois, Urbana, IL

30

11

1983

11/1/1983 12:00:00 AM

1566

1566

Bipolar transistors; Doping; Double heterojunction bipolar transistors; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Molecular beam epitaxial growth; Performance gain; Photonic band gap;

English

Electron Devices, IEEE Transactions on

ieee

0018-9383

jour

10.1109/T-ED.1983.21342

1483243