Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Author

Kuan-Chang Chang ; Rui Zhang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Lou, J.C. ; Jung-Hui Chen ; Tai-Fa Young ; Min-Chen Chen ; Ya-Liang Yang ; Yin-Chih Pan ; Geng-Wei Chang ; Tian-Jian Chu ; Chih-Cheng Shih ; Jian-Yu Chen ; Chih-Hung Pan ; Yu-Ting Su ; Yo

Author_Institution

Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

34

Issue

5

fYear

2013

fDate

May-13

Firstpage

677

Lastpage

679

Abstract

In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C:SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.

Keywords

Fourier transform spectra; Fourier transform spectroscopy; circuit stability; graphene; hopping conduction; infrared spectra; infrared spectroscopy; oxidation; random-access storage; reduction (chemical); silicon compounds; sputtered coatings; zirconium; Fourier transform infrared spectroscopy spectra; I-V characteristics; Raman transform infrared spectroscopy spectra; Zr:SiO_x-C:SiO_x; carrier hopping distance variation; current 0.02 mA; graphene oxide redox reaction model; graphene-oxide-doped silicon oxide resistance random access memory device; high ON-OFF resistance ratio; hopping conduction; resistive switching memory device; single-active-layer structure; sputter process; stability; Conduction; graphene oxide; hopping; redox reaction; resistance random access memory (RRAM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2250899

Filename

6488720