DocumentCode :
1087865
Title :
IVA-5 through-AIN implantation for a high transconductance self-aligned GaAs MESFET
Author :
Nishi, Hidetaka ; Onodera, Hidetoshi ; Kawata, Hirotaka ; Yokoyama, Naoki ; Shibatomi, A.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1589
Lastpage :
1589
Keywords :
Annealing; Argon; Diodes; FETs; Furnaces; Gallium arsenide; MESFETs; Materials science and technology; Passivation; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21377
Filename :
1483278
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1087865
