DocumentCode :
1087969
Title :
Characterization of In0.53 Ga0.47 As photodiodes exhibiting low dark current and low junction capacitance
Author :
Leheny, R.F. ; Nahory, Robert E. ; Pollack, Martin A. ; Beebe, Edgar D. ; DeWinter, J.
Author_Institution :
Bell Laboratories, Holmdel, NJ, USA
Volume :
17
Issue :
2
fYear :
1981
fDate :
2/1/1981 12:00:00 AM
Firstpage :
227
Lastpage :
231
Abstract :
The preparation and properties of grown p-n homojunction In0.53 Ga0.47 As photodiodes for operation in the 
m wavelength range are described. At a reverse bias of 20 V, these diodes exhibit generation-recombination limited dark current as low as 
A, junction capacitance of 0.3 pF, and pulse response corresponding to a circuit-limited rise time of 60 ps and diffusion-limited full width (FWHM) of 140 ps.
m wavelength range are described. At a reverse bias of 20 V, these diodes exhibit generation-recombination limited dark current as low as A, junction capacitance of 0.3 pF, and pulse response corresponding to a circuit-limited rise time of 60 ps and diffusion-limited full width (FWHM) of 140 ps.Keywords :
Optical fiber receivers; Capacitance; Dark current; Etching; FETs; Helium; Indium phosphide; Optical pulse generation; P-i-n diodes; P-n junctions; Photodiodes;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071073
Filename :
1071073
Link To Document :
