DocumentCode
108802
Title
The Invention and Demonstration of the IGBT [A Look Back]
Author
Shenai, Krishna
Volume
2
Issue
2
fYear
2015
fDate
Jun-15
Firstpage
12
Lastpage
16
Abstract
Much of the credit for 20th-century advances in computing and communication goes to the silicon transistor and the integrated circuit. The same may be said for the silicon insulated gate bipolar transistor (IGBT) with respect to the impending revolution taking place in energy technology. The silicon IGBT offers unprecedented energy efficiency when switching electrical power in the range of few hundred kilowatts to multimegawatts at a low manufacturing cost. It is transforming the electric utility, transportation, telecommunication, manufacturing, and medical infrastructures in a manner never seen before. This article pertains to the discovery and demonstration of early IGBT devices.
Keywords
elemental semiconductors; insulated gate bipolar transistors; power semiconductor switches; silicon; IGBT devices; Si; electric utility; energy efficiency; integrated circuit; medical infrastructures; silicon IGBT; silicon insulated gate bipolar transistor; telecommunication; transportation; History; Insulated gate bipolar transistors; Logic gates; MOSFET; Performance evaluation; Thyristors;
fLanguage
English
Journal_Title
Power Electronics Magazine, IEEE
Publisher
ieee
ISSN
2329-9207
Type
jour
DOI
10.1109/MPEL.2015.2421751
Filename
7130727
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