• DocumentCode
    108802
  • Title

    The Invention and Demonstration of the IGBT [A Look Back]

  • Author

    Shenai, Krishna

  • Volume
    2
  • Issue
    2
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    12
  • Lastpage
    16
  • Abstract
    Much of the credit for 20th-century advances in computing and communication goes to the silicon transistor and the integrated circuit. The same may be said for the silicon insulated gate bipolar transistor (IGBT) with respect to the impending revolution taking place in energy technology. The silicon IGBT offers unprecedented energy efficiency when switching electrical power in the range of few hundred kilowatts to multimegawatts at a low manufacturing cost. It is transforming the electric utility, transportation, telecommunication, manufacturing, and medical infrastructures in a manner never seen before. This article pertains to the discovery and demonstration of early IGBT devices.
  • Keywords
    elemental semiconductors; insulated gate bipolar transistors; power semiconductor switches; silicon; IGBT devices; Si; electric utility; energy efficiency; integrated circuit; medical infrastructures; silicon IGBT; silicon insulated gate bipolar transistor; telecommunication; transportation; History; Insulated gate bipolar transistors; Logic gates; MOSFET; Performance evaluation; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Power Electronics Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    2329-9207
  • Type

    jour

  • DOI
    10.1109/MPEL.2015.2421751
  • Filename
    7130727