• DocumentCode
    108806
  • Title

    Mid-IR GaSb-Based Bipolar Cascade VCSELs

  • Author

    Sanchez, Dominick ; Cerutti, L. ; Tournie, E.

  • Author_Institution
    Inst. Electron. du Sud, Univ. Montpellier, Montpellier, France
  • Volume
    25
  • Issue
    9
  • fYear
    2013
  • fDate
    1-May-13
  • Firstpage
    882
  • Lastpage
    884
  • Abstract
    We design, fabricate, and study GaSb-based bipolar cascade vertical-cavity surface emitting lasers (VCSELs) for laser emission of around 2.3 μm. An electrically coupled two-stage design shows high-temperature continuous wave (CW) operation and an approximately one-order-of-magnitude increase of CW output power at 30°C as compared with single-stage VCSELs.
  • Keywords
    semiconductor lasers; surface emitting lasers; electrically coupled two-stage design; high-temperature continuous wave operation; laser emission; mid-IR GaSb-based bipolar cascade VCSEL; temperature 30 degC; vertical-cavity surface emitting lasers; Bipolar cascade vertical-cavity surface emitting lasers (VCSELs); GaSb; mid-infrared (MIR);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2013.2254707
  • Filename
    6488725