DocumentCode :
108806
Title :
Mid-IR GaSb-Based Bipolar Cascade VCSELs
Author :
Sanchez, Dominick ; Cerutti, L. ; Tournie, E.
Author_Institution :
Inst. Electron. du Sud, Univ. Montpellier, Montpellier, France
Volume :
25
Issue :
9
fYear :
2013
fDate :
1-May-13
Firstpage :
882
Lastpage :
884
Abstract :
We design, fabricate, and study GaSb-based bipolar cascade vertical-cavity surface emitting lasers (VCSELs) for laser emission of around 2.3 μm. An electrically coupled two-stage design shows high-temperature continuous wave (CW) operation and an approximately one-order-of-magnitude increase of CW output power at 30°C as compared with single-stage VCSELs.
Keywords :
semiconductor lasers; surface emitting lasers; electrically coupled two-stage design; high-temperature continuous wave operation; laser emission; mid-IR GaSb-based bipolar cascade VCSEL; temperature 30 degC; vertical-cavity surface emitting lasers; Bipolar cascade vertical-cavity surface emitting lasers (VCSELs); GaSb; mid-infrared (MIR);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2254707
Filename :
6488725
Link To Document :
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