DocumentCode
1088167
Title
Thermal parameter extraction for bipolar circuit modelling
Author
Fox, R.M. ; Lee, S.-G.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume
27
Issue
19
fYear
1991
Firstpage
1719
Lastpage
1720
Abstract
A practical method is presented for extracting the thermal spreading resistance of BJTs, which is needed for accurate circuit simulation. The method uses the output resistance as the temperature sensitive parameter. Measurements can be made in the time or frequency domain.
Keywords
bipolar transistors; semiconductor device models; BJTs; accurate circuit simulation; bipolar circuit modelling; bipolar transistors; models; output resistance; temperature sensitive parameter; thermal spreading resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911070
Filename
132905
Link To Document