DocumentCode :
108818
Title :
Broadband Millimeter-Wave LNAs (47–77 GHz and 70–140 GHz) Using a T-Type Matching Topology
Author :
Gang Liu ; Schumacher, Hermann
Author_Institution :
Center on Integrated Circuits in Commun., Ulm Univ., Ulm, Germany
Volume :
48
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
2022
Lastpage :
2029
Abstract :
This paper presents the design and characterization of two broadband millimeter-wave LNAs realized in 0.25- μm and 0.13- μm SiGe BiCMOS technologies. Both circuits adopt a T-type matching topology to achieve the wide bandwidth (47-77 GHz for the V-band LNA and 70-140 GHz for the W/F-band LNA). The measured maximum gain is about 23 dB for both LNAs. The measured noise figure (NF) is below 7.2 dB (from 50 to 75 GHz) for the V-band LNA and below 7 dB (from 78 to 110 GHz) for the W/F-band LNA. Both LNAs are differential circuits and consume 52/54 mW dc power. To the best of the authors´ knowledge, both LNAs achieve the widest bandwidth in corresponding frequency bands with very competitive gain and NF.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; differential amplifiers; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; wideband amplifiers; BiCMOS technologies; NF; SiGe; T-type matching topology; V-band LNA; W-F-band LNA; broadband millimeter-wave LNA; differential circuits; frequency 47 GHz to 77 GHz; frequency 70 GHz to 140 GHz; low-noise amplifiers; noise figure; power 52 mW; power 54 mW; size 0.13 mum; size 0.25 mum; Bandwidth; Gain; Impedance matching; Noise; Noise measurement; Topology; Transmission line measurements; BiCMOS; broadband; low-noise amplifiers (LNAs); millimeter-wave integrated circuits;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2265500
Filename :
6542018
Link To Document :
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